Invention Application
US20160071574A1 METHOD AND CIRCUITS FOR LOW LATENCY INITIALIZATION OF STATIC RANDOM ACCESS MEMORY 有权
用于静态随机访问存储器的低延迟初始化的方法和电路

  • Patent Title: METHOD AND CIRCUITS FOR LOW LATENCY INITIALIZATION OF STATIC RANDOM ACCESS MEMORY
  • Patent Title (中): 用于静态随机访问存储器的低延迟初始化的方法和电路
  • Application No.: US14482613
    Application Date: 2014-09-10
  • Publication No.: US20160071574A1
    Publication Date: 2016-03-10
  • Inventor: Greg M. HessRamesh ArvapalliAndrew L. Arengo
  • Applicant: Apple Inc.
  • Main IPC: G11C11/419
  • IPC: G11C11/419
METHOD AND CIRCUITS FOR LOW LATENCY INITIALIZATION OF STATIC RANDOM ACCESS MEMORY
Abstract:
A method and various circuit embodiments for low latency initialization of an SRAM are disclosed. In one embodiment, an IC includes an SRAM coupled to at least one functional circuit block. The SRAM includes a number of storage location arranged in rows and columns. The functional circuit block and the SRAM may be in different power domains. Upon initially powering up or a restoration of power, the functional circuit block may assert an initialization signal to begin an initialization process. Responsive to the initialization signal, level shifters may force assertion of various select/enable signals in a decoder associated with the SRAM. Thereafter, initialization data may be written to the SRAM. Writing initialization data may be performed on a row-by-row basis, with all columns in a row being written to substantially simultaneously.
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