Invention Application
US20160076129A1 COMPONENT FOR PLASMA PROCESSING APPARATUS, AND MANUFACTURING METHOD THEREFOR
审中-公开
等离子体加工设备的组件及其制造方法
- Patent Title: COMPONENT FOR PLASMA PROCESSING APPARATUS, AND MANUFACTURING METHOD THEREFOR
- Patent Title (中): 等离子体加工设备的组件及其制造方法
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Application No.: US14854411Application Date: 2015-09-15
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Publication No.: US20160076129A1Publication Date: 2016-03-17
- Inventor: Nobuyuki Nagayama , Koji Mitsuhashi , Shikou Abukawa , Masaya Nagai , Yoshinori Kanazawa , Tetsuya Niya
- Applicant: Tokyo Electron Limited , Tocalo Co., Ltd.
- Priority: JP2014-188695 20140917; JP2015-129940 20150629
- Main IPC: C23C4/12
- IPC: C23C4/12 ; C23C4/06 ; C23C4/00 ; C23C4/10
Abstract:
Particle generation can be suppressed from a thermally sprayed film of yttrium fluoride. A component exposed to plasma in a plasma processing apparatus is provided. The component includes a base and a film. The base is made of aluminum or an aluminum alloy, and an alumite film may be formed on a surface of the base. The film is formed by thermally spraying yttrium fluoride on a surface of the base or on a surface of an underlying layer including a layer provided on the base. A porosity of the film is 4% or less, and an arithmetic mean roughness of a surface of the film is 4.5 μm or less.
Information query
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