Invention Application
- Patent Title: DIFFERENTIAL SILICON INTERFACE FOR DIELECTRIC SLAB WAVEGUIDE
- Patent Title (中): 用于电介质波导的差分硅接口
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Application No.: US14692794Application Date: 2015-04-22
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Publication No.: US20160077293A1Publication Date: 2016-03-17
- Inventor: Chewn-Pu Jou , Tien-I Bao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: G02B6/42
- IPC: G02B6/42 ; G02B6/132 ; G02B6/136

Abstract:
The present disclosure relates to an integrated chip having differential coupling elements that couple electromagnetic radiation having a frequency outside of the visible spectrum between a silicon substrate and a dielectric waveguide overlying the silicon substrate. In some embodiments, the integrated chip has a dielectric waveguide disposed within an inter-level dielectric (ILD) material overlying a semiconductor substrate. A differential driver circuit generates a differential signal having a first transmission signal component at a first output node and a complementary second transmission signal component at a second output node. A first transmission electrode located along a first side of the dielectric waveguide receives the first transmission signal component from the first output node, and a second transmission electrode located along a second side of the dielectric waveguide receives the complementary second transmission signal component from the second output node.
Public/Granted literature
- US10126512B2 Differential silicon interface for dielectric slab waveguide Public/Granted day:2018-11-13
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