发明申请
US20160077906A1 HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM 有权
用于模拟电气可擦除(EEE)存储器系统的高电压故障恢复

HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM
摘要:
The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.
信息查询
0/0