发明申请
US20160077906A1 HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM
有权
用于模拟电气可擦除(EEE)存储器系统的高电压故障恢复
- 专利标题: HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM
- 专利标题(中): 用于模拟电气可擦除(EEE)存储器系统的高电压故障恢复
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申请号: US14484876申请日: 2014-09-12
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公开(公告)号: US20160077906A1公开(公告)日: 2016-03-17
- 发明人: ROSS S. SCOULLER , JEFFREY C. CUNNINGHAM , DANIEL L. ANDRE , TIM J. COOTS
- 申请人: ROSS S. SCOULLER , JEFFREY C. CUNNINGHAM , DANIEL L. ANDRE , TIM J. COOTS
- 主分类号: G06F11/07
- IPC分类号: G06F11/07
摘要:
The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.
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