发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14637115申请日： 2015-03-03
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公开(公告)号： US20160079410A1公开(公告)日： 2016-03-17
- 发明人: Takaaki YASUMOTO , Naoko YANASE , Kazuhide ABE , Takeshi UCHIHARA , Yasunobu SAITO , Hidetoshi FUJIMOTO , Masaru FURUKAWA , Yasunari YAGI , Miki YUMOTO , Atsuko IIDA , Yukako MURAKAMI
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2014-185571 20140911
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/06 ; H01L29/423 ; H01L29/205 ; H01L29/417 ; H01L29/20 ; H01L29/04
摘要：
A semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride semiconductor layer. The first electrode has a first surface. The second electrode has a second surface. The second surface is provided with a plurality of convex portions and concave portions. The second electrode is spaced from the first electrode in a first direction. The third electrode is spaced from the first electrode in a second direction intersecting the first direction. The nitride semiconductor layer is provided between the first surface and the second surface, and between the third electrode and the second surface.
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