Invention Application
US20160081189A1 COMPOSITION FOR FORMING A CONDUCTIVE FILM, A CONDUCTIVE FILM, A METHOD FOR PRODUCING A PLATING FILM, A PLATING FILM, AND AN ELECTRONIC DEVICE 有权
用于形成导电膜的组合物,导电膜,制造薄膜的方法,镀膜和电子装置

  • Patent Title: COMPOSITION FOR FORMING A CONDUCTIVE FILM, A CONDUCTIVE FILM, A METHOD FOR PRODUCING A PLATING FILM, A PLATING FILM, AND AN ELECTRONIC DEVICE
  • Patent Title (中): 用于形成导电膜的组合物,导电膜,制造薄膜的方法,镀膜和电子装置
  • Application No.: US14849960
    Application Date: 2015-09-10
  • Publication No.: US20160081189A1
    Publication Date: 2016-03-17
  • Inventor: Sugirou SHIMODAKenzou OOKITAKeisuke SATOUKazuto WATANABE
  • Applicant: JSR Corporation
  • Applicant Address: JP Minato-ku
  • Assignee: JSR Corporation
  • Current Assignee: JSR Corporation
  • Current Assignee Address: JP Minato-ku
  • Priority: JP2014-187108 20140912; JP2015-118320 20150611
  • Main IPC: H05K1/09
  • IPC: H05K1/09 H05K3/18 C03C17/10 H01B1/02
COMPOSITION FOR FORMING A CONDUCTIVE FILM, A CONDUCTIVE FILM, A METHOD FOR PRODUCING A PLATING FILM, A PLATING FILM, AND AN ELECTRONIC DEVICE
Abstract:
A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.
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