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Invention Application
US20160083650A1 ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 有权
蚀刻液，套件，使用其的蚀刻方法，生产半导体基板产品的方法和制造半导体元件的方法

  • Patent Title: ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
  • Patent Title (中): 蚀刻液，套件，使用其的蚀刻方法，生产半导体基板产品的方法和制造半导体元件的方法
  • Application No.: US14956500
    Application Date: 2015-12-02
  • Publication No.: US20160083650A1
    Publication Date: 2016-03-24
  • Inventor: Yasuo SUGISHIMA , Atsushi MIZUTANI , Kee Young PARK
  • Applicant: FUJIFILM Corporation
  • Applicant Address: JP Tokyo
  • Assignee: FUJIFILM Corporation
  • Current Assignee: FUJIFILM Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2013-117911 20130604; JP2013-154769 20130725; JP2013-273291 20131227
  • Main IPC: C09K13/08
  • IPC: C09K13/08 ;  H01L21/3213
ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Abstract:
There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.
Abstract(Chinese):

提供包括硝酸的蚀刻液; 含氟化合物; 和含氮原子的含氮有机化合物A或含磷化合物B.

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