Invention Application
- Patent Title: METHOD FOR EVALUATING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 用于评估半导体膜的方法和制造半导体器件的方法
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Application No.: US14855648Application Date: 2015-09-16
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Publication No.: US20160086792A1Publication Date: 2016-03-24
- Inventor: Akihisa SHIMOMURA , Naoki OKUNO , Mitsuhiro ICHIJO , Noriyoshi SUZUKI , Tetsuhiro TANAKA , Sachiaki TEZUKA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2014-191058 20140919
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66
Abstract:
A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.
Public/Granted literature
- US09786495B2 Method for evaluating semiconductor film and method for manufacturing semiconductor device Public/Granted day:2017-10-10
Information query
IPC分类:
