Invention Application
US20160086841A1 METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED USING THE SAME
审中-公开
用于形成半导体器件的图案的方法和使用其形成的半导体器件
- Patent Title: METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED USING THE SAME
- Patent Title (中): 用于形成半导体器件的图案的方法和使用其形成的半导体器件
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Application No.: US14711394Application Date: 2015-05-13
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Publication No.: US20160086841A1Publication Date: 2016-03-24
- Inventor: SEUNGHYUN SONG , Hyeon Kyun Noh , Taeyong Kwon , Sangsu Kim , Shigenobu Maeda , Krishna Bhuwalka , Uihui Kwon , Keunho Lee , Wonsok Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2014-0125088 20140919
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/10 ; H01L21/02 ; H01L29/06 ; H01L21/308 ; H01L29/66

Abstract:
A method for forming a pattern of a semiconductor device and a semiconductor device formed using the same are provided. The method includes forming a buffer layer on a substrate, forming a channel layer on the buffer layer, forming support patterns penetrating the channel layer, and forming channel fin patterns and a buffer pattern by patterning the channel layer and the buffer layer. The channel layer includes a material of which a lattice constant is different from that of the buffer layer, and each of the channel fin patterns has both sidewalls that are in contact with the support patterns and are opposite to each other.
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