Invention Application
- Patent Title: Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
- Patent Title (中): 铁电集成电路的低温钝化,用于增强极化性能
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Application No.: US14728683Application Date: 2015-06-02
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Publication No.: US20160086960A1Publication Date: 2016-03-24
- Inventor: Huang-Chun Wen , Richard Allen Bailey , Antonio Guillermo Acosta , John A. Rodriguez , Scott Robert Summerfelt , Kemal Tamer San
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L21/02 ; H01L29/78 ; H01L23/31 ; H01L23/29 ; H01L21/326 ; H01L23/00

Abstract:
Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.
Information query
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