Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US14961622Application Date: 2015-12-07
-
Publication No.: US20160087025A1Publication Date: 2016-03-24
- Inventor: Takuo Funaya , Hiromi Shigihara , Hisao SHIGIHARA
- Applicant: Renesas Electronics Corporation
- Priority: JP2012-279843 20121221
- Main IPC: H01L49/02
- IPC: H01L49/02

Abstract:
A semiconductor device includes a semiconductor substrate having a main surface; a first coil formed on the main surface; a first insulating film formed over the first coil and having a first main surface; a second insulating film formed on the first main surface of the first insulating film and having a second main surface; and a second coil formed on the second main surface of the second insulating film, wherein the first main surface of the first insulating film has a first area on which the second insulating film is formed, and has a second area without the first area in a plan view, and wherein the second insulating film is surrounded with the second area in the plane view.
Public/Granted literature
- US09818815B2 Semiconductor device and method of manufacturing the same Public/Granted day:2017-11-14
Information query
IPC分类: