Invention Application
US20160087200A1 MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL
有权
存储器，包括可变电阻存储器单元上的选择器开关
- Patent Title: MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL
- Patent Title (中): 存储器，包括可变电阻存储器单元上的选择器开关
-
Application No.: US14947455Application Date: 2015-11-20
-
Publication No.: US20160087200A1Publication Date: 2016-03-24
- Inventor: Andrea Redaelli , Agostino Pirovano
- Applicant: Micron Technology, Inc.
- Priority: ITPCT/IT2009/000537 20091130
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
Public/Granted literature
- US09502650B2 Memory including a selector switch on a variable resistance memory cell Public/Granted day:2016-11-22
Information query
IPC分类:
