Invention Application
- Patent Title: METHOD FOR FORMING THROUGH SUBSTRATE VIAS
- Patent Title (中): 通过基板VIAS形成的方法
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Application No.: US14499287Application Date: 2014-09-29
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Publication No.: US20160093530A1Publication Date: 2016-03-31
- Inventor: John C. HARLEY
- Applicant: Innovative Micro Technology
- Assignee: Innovative Micro Technology
- Current Assignee: Innovative Micro Technology
- Main IPC: H01L21/768
- IPC: H01L21/768 ; B81C1/00

Abstract:
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.
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