Invention Application
US20160093530A1 METHOD FOR FORMING THROUGH SUBSTRATE VIAS 审中-公开
通过基板VIAS形成的方法

METHOD FOR FORMING THROUGH SUBSTRATE VIAS
Abstract:
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.
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