Invention Application
US20160094216A1 Drive Circuit for Reverse-Conducting IGBTs 有权
反向导通IGBT的驱动电路

  • Patent Title: Drive Circuit for Reverse-Conducting IGBTs
  • Patent Title (中): 反向导通IGBT的驱动电路
  • Application No.: US14862582
    Application Date: 2015-09-23
  • Publication No.: US20160094216A1
    Publication Date: 2016-03-31
  • Inventor: Daniel Domes
  • Applicant: Infineon Technologies AG
  • Priority: DE102014114085.0 20140929
  • Main IPC: H03K17/567
  • IPC: H03K17/567
Drive Circuit for Reverse-Conducting IGBTs
Abstract:
A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks.
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