Invention Application
- Patent Title: Drive Circuit for Reverse-Conducting IGBTs
- Patent Title (中): 反向导通IGBT的驱动电路
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Application No.: US14862582Application Date: 2015-09-23
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Publication No.: US20160094216A1Publication Date: 2016-03-31
- Inventor: Daniel Domes
- Applicant: Infineon Technologies AG
- Priority: DE102014114085.0 20140929
- Main IPC: H03K17/567
- IPC: H03K17/567

Abstract:
A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks.
Public/Granted literature
- US09698772B2 Drive circuit for reverse-conducting IGBTs Public/Granted day:2017-07-04
Information query
IPC分类: