Invention Application
- Patent Title: RESIST PATTERN-FORMING METHOD
-
Application No.: US14877357Application Date: 2015-10-07
-
Publication No.: US20160097978A1Publication Date: 2016-04-07
- Inventor: Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2010-202361 20100909; JP2011-181004 20110822
- Main IPC: G03F7/32
- IPC: G03F7/32 ; G03F7/20
Abstract:
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
Information query
IPC分类:
