Invention Application
- Patent Title: MATERIAL DEPOSITION FOR HIGH ASPECT RATIO STRUCTURES
- Patent Title (中): 高比例结构材料沉积
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Application No.: US14506536Application Date: 2014-10-03
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Publication No.: US20160099154A1Publication Date: 2016-04-07
- Inventor: Jun Xue , Ludovic Godet , Martin A. Hilkene , Matthew D. Scotney-Castle
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01J37/32 ; C23C16/50 ; H01L21/02 ; C23C14/48
Abstract:
Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.
Public/Granted literature
- US09852902B2 Material deposition for high aspect ratio structures Public/Granted day:2017-12-26
Information query
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