Invention Application
US20160099162A1 SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER
审中-公开
ICP等离子体加工室的单层环形设计，基板极限边缘缺陷减少
- Patent Title: SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER
- Patent Title (中): ICP等离子体加工室的单层环形设计，基板极限边缘缺陷减少
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Application No.: US14765872Application Date: 2014-04-30
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Publication No.: US20160099162A1Publication Date: 2016-04-07
- Inventor: Siu Tang NG , Changhun LEE , Huutri DAO , Adam LANE , Michael D. WILLWERTH
- Applicant: APPLIED MATERIALS, INC.
- International Application: PCT/US2014/036213 WO 20140430
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01J37/32
Abstract:
Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2 mm is formed on the lip between the substrate and the vertical face of the step.
Information query
IPC分类:
