Invention Application
US20160110102A1 HYBRID MEMORY MODULE STRUCTURE AND METHOD OF DRIVING THE SAME 审中-公开
混合存储器模块结构及其驱动方法

  • Patent Title: HYBRID MEMORY MODULE STRUCTURE AND METHOD OF DRIVING THE SAME
  • Patent Title (中): 混合存储器模块结构及其驱动方法
  • Application No.: US14740221
    Application Date: 2015-06-15
  • Publication No.: US20160110102A1
    Publication Date: 2016-04-21
  • Inventor: Sang-Kil LEE
  • Applicant: Samsung Electronics Co., Ltd.
  • Priority: KR10-2014-0141815 20141020
  • Main IPC: G06F3/06
  • IPC: G06F3/06 G11C7/10
HYBRID MEMORY MODULE STRUCTURE AND METHOD OF DRIVING THE SAME
Abstract:
A hybrid memory module structure includes a channel for receiving data from and transmitting data to a device external to the hybrid memory module structure, a first memory module connected to the channel, and a second memory module connected to the channel. The first memory module includes at least a first memory and a second memory, the first memory being a working memory and the second memory being a storage memory. The second memory module includes at least a third memory and a fourth memory, the third memory being a working memory and the fourth memory being a storage memory. The channel includes a first data line commonly connected to the first memory and the second memory, and a second data line commonly connected to the third memory and the fourth memory.
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