Invention Application
- Patent Title: Ion Beam Uniformity Control
- Patent Title (中): 离子束均匀性控制
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Application No.: US14949468Application Date: 2015-11-23
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Publication No.: US20160111241A1Publication Date: 2016-04-21
- Inventor: Alexandre Likhanskii , Svetlana B. Radovanov , Bon-Woong Koo
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Main IPC: H01J27/02
- IPC: H01J27/02 ; H01J27/16

Abstract:
A plasma chamber having improved controllability of the ion density of the extracted ribbon ion beam is disclosed. A plurality of pairs of RF biased electrodes is disposed on opposite sides of the extraction aperture in a plasma chamber. In some embodiments, one of each pair of RF biased electrodes is biased at the extraction voltage, while the other of each pair is coupled to a RF bias power supply, which provides a RF voltage having a DC component and an AC component. In another embodiment, both of the electrodes in each pair are coupled to a RF biased power supply. A blocker may be disposed in the plasma chamber near the extraction aperture. In some embodiments, RF biased electrodes are disposed on the blocker.
Public/Granted literature
- US09520259B2 Ion beam uniformity control Public/Granted day:2016-12-13
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