Invention Application
- Patent Title: FINFET SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE
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Application No.: US14974772Application Date: 2015-12-18
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Publication No.: US20160111322A1Publication Date: 2016-04-21
- Inventor: Yanxiang LIU , Min-hwa CHI
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/225 ; H01L29/66 ; H01L21/283
Abstract:
There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed a local buried oxide region aligned to the gate. In one embodiment, the local buried oxide region is formed below a channel area of the fin.
Information query
IPC分类:
