Methods for forming a dummy metal structure between dies on a semiconductor wafer and the resulting devices are disclosed. Embodiments may include forming metal interconnection layers extending from a substrate of a semiconductor wafer to a top metal interconnection layer of the semiconductor wafer between a plurality of die regions, each of the metal interconnection layers including a plurality of dummy vertical interconnect accesses (VIAs) and a plurality of dummy metal lines, with the plurality of dummy metal lines laterally connecting the plurality of dummy VIAs within each respective metal interconnection layer, and a plurality of dummy VIAs within a first metal interconnection layer vertically connecting a plurality of dummy metal lines within the first metal interconnection layer to a plurality of dummy metal lines within a second metal interconnection layer, and the second metal interconnection layer being below the first metal interconnection layer.