Invention Application
- Patent Title: FIN DEVICE WITH BLOCKING LAYER IN CHANNEL REGION
- Patent Title (中): 具有阻塞层的FIN设备在通道区域中
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Application No.: US14983329Application Date: 2015-12-29
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Publication No.: US20160111491A1Publication Date: 2016-04-21
- Inventor: Ajey P. Jacob , Min-Hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/161 ; H01L29/78
Abstract:
A semiconductor device includes a fin defined on a substrate and a gate electrode structure formed above the fin. A channel region of the device is defined beneath the gate electrode structure and source/drain regions of the fin are defined adjacent the gate electrode structure. A dielectric layer is defined at least in the channel region. The dielectric layer includes oxygen and at least one of nitrogen, carbon or fluorine.
Information query
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