Invention Application
- Patent Title: Memory Devices, Memory Device Operational Methods, and Memory Device Implementation Methods
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Application No.: US14987637Application Date: 2016-01-04
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Publication No.: US20160118087A1Publication Date: 2016-04-28
- Inventor: Yogesh Luthra , Makoto Kitagawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
Memory devices, memory device operational methods, and memory device implementation methods are described. According to one arrangement, a memory device includes memory circuitry configured to store data in a plurality of different data states, temperature sensor circuitry configured to sense a temperature of the memory device and to generate an initial temperature output which is indicative of the temperature of the memory device, and conversion circuitry coupled with the temperature sensor circuitry and configured to convert the initial temperature output into a converted temperature output which is indicative of the temperature of the memory device at a selected one of a plurality of possible different temperature resolutions, and wherein the converted temperature output is utilized by the memory circuitry to implement at least one operation with respect to storage of the data.
Public/Granted literature
- US09576618B2 Memory devices, memory device operational methods, and memory device implementation methods Public/Granted day:2017-02-21
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