Invention Application
US20160118431A1 FRONT-SIDE IMAGER HAVING A REDUCED DARK CURRENT ON SOI SUBSTRATE
有权
在SOI衬底上具有减少的暗电流的前侧成像器
- Patent Title: FRONT-SIDE IMAGER HAVING A REDUCED DARK CURRENT ON SOI SUBSTRATE
- Patent Title (中): 在SOI衬底上具有减少的暗电流的前侧成像器
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Application No.: US14840164Application Date: 2015-08-31
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Publication No.: US20160118431A1Publication Date: 2016-04-28
- Inventor: Didier DUTARTRE
- Applicant: STMicroelectronics SA
- Priority: FR1460236 20141024
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.
Public/Granted literature
- US09704903B2 Front-side imager having a reduced dark current on SOI substrate Public/Granted day:2017-07-11
Information query
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