发明申请
US20160124784A1 SEMICONDUCTOR MEMORY DEVICES INCLUDING ERROR CORRECTION CIRCUITS AND METHODS OF OPERATING THE SEMICONDUCTOR MEMORY DEVICES
审中-公开
包括误差校正电路的半导体存储器件及其操作半导体存储器件的方法
- 专利标题： SEMICONDUCTOR MEMORY DEVICES INCLUDING ERROR CORRECTION CIRCUITS AND METHODS OF OPERATING THE SEMICONDUCTOR MEMORY DEVICES
- 专利标题（中）： 包括误差校正电路的半导体存储器件及其操作半导体存储器件的方法
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申请号： US14992472申请日： 2016-01-11
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公开(公告)号： US20160124784A1公开(公告)日： 2016-05-05
- 发明人: Hoi-ju CHUNG , Su-a KIM , Mu-jin SEO , Hak-soo YU , Jae-youn YOUN , Hyo-jin CHOI
- 申请人： Hoi-ju CHUNG , Su-a KIM , Mu-jin SEO , Hak-soo YU , Jae-youn YOUN , Hyo-jin CHOI
- 优先权： KR10-2013-0020674 20130226
- 主分类号： G06F11/07
- IPC分类号： G06F11/07 ; G11C11/409 ; G06F11/10 ; G11C29/00
摘要：
A memory controller includes a controller input/output circuit configured to output a first command to read first data, and output a second command to read an error corrected portion of the first data. A memory device includes: an error detector, a data storage circuit and an error correction circuit. The error detector is configured to detect a number of error bits in data read from a memory cell in response to a first command. The data storage circuit is configured to store the read data if the detected number of error bits is greater than or equal to a first threshold value. The error correction circuit is configured to correct the stored data.