Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS
- Patent Title (中): 等离子体加工设备
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Application No.: US14785471Application Date: 2014-05-14
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Publication No.: US20160126067A1Publication Date: 2016-05-05
- Inventor: Naohiko OKUNISHI
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2013-106895 20130521
- International Application: PCT/JP2014/002549 WO 20140514
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/44 ; C23C16/50

Abstract:
A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a line such as a power feed line or a signal line from an electrical member other than a high frequency electrode within a processing vessel. Regarding winding pitches, each of the solenoid coils 104(1) and 104(2) is divided to multiple sections K1, K2, . . . in a coil axis direction, and, a winding pitch pi in each section Ki (i=1, 2, . . . ) is set independently. Comb teeth M inserted into winding gaps of both solenoid coils 104(1) and 104(2) are formed on inner surfaces of multiple rod-shaped comb-teeth member 114 provided adjacent to the solenoid coils 104(1) and 104(2).
Public/Granted literature
- US09754766B2 Plasma processing apparatus Public/Granted day:2017-09-05
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