发明申请
US20160130720A1 BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD
有权
双螺杆半导体半绝缘组III型氮化物及其生产方法
- 专利标题： BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD
- 专利标题（中）： 双螺杆半导体半绝缘组III型氮化物及其生产方法
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申请号： US14981292申请日： 2015-12-28
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公开(公告)号： US20160130720A1公开(公告)日： 2016-05-12
- 发明人: Tadao Hashimoto , Edward Letts , Sierra Hoff
- 申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
- 主分类号： C30B7/10
- IPC分类号： C30B7/10 ; B28D5/00 ; H01L29/207 ; H01L21/02 ; H01L29/20 ; C30B29/40 ; B24B37/04
摘要：
The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
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