Invention Application
- Patent Title: SCHOTTKY DIODES FOR REPLACEMENT METAL GATE INTEGRATED CIRCUITS
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Application No.: US14996360Application Date: 2016-01-15
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Publication No.: US20160133622A1Publication Date: 2016-05-12
- Inventor: Mahalingam Nandakumar
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/49 ; H01L29/47 ; H01L29/872 ; H01L29/36
Abstract:
An integrated circuit and method with a metal gate transistor and with a Schottky diode where the metal used to form the Schottky diode is the metal used to form the metal gate.
Public/Granted literature
- US09564427B2 Schottky diodes for replacement metal gate integrated circuits Public/Granted day:2017-02-07
Information query
IPC分类:
