发明申请
- 专利标题: BIAS CIRCUIT AND POWER AMPLIFIER HAVING THE SAME
- 专利标题(中): 偏置电路和功率放大器
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申请号: US14886804申请日: 2015-10-19
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公开(公告)号: US20160134245A1公开(公告)日: 2016-05-12
- 发明人: Jun Goo WON , Youn Suk KIM , Yoshiyuki TONAMI , Ki Joong KIM
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2014-0155374 20141110
- 主分类号: H03F1/02
- IPC分类号: H03F1/02 ; H03F3/21 ; H03K17/60
摘要:
A bias circuit providing different bias voltages depending on a power mode through a simple circuit, and a power amplifier having the same are provided. The bias circuit and the power amplifier include a bias setting unit configured to vary a voltage level of a control signal controlling a bias voltage according to an operation of a first transistor being switched-off in a high power mode and switched-on in a low power mode. A bias supplying unit includes a bias supplying transistor switched based on the control signal, to supply the bias voltage having a voltage level according to a switching operation of the bias supplying transistor.
公开/授权文献
- US10027320B2 Bias circuit and power amplifier having the same 公开/授权日:2018-07-17
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