Invention Application
- Patent Title: SEMICONDUCTOR PACKAGES HAVING THROUGH ELECTRODES AND METHODS OF FABRICATING THE SAME
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Application No.: US15010438Application Date: 2016-01-29
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Publication No.: US20160148909A1Publication Date: 2016-05-26
- Inventor: Hyunsoo CHUNG , Jongyeon KIM , In-Young LEE , Tae-Je CHO
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2013-0074572 20130627
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/31

Abstract:
Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.
Public/Granted literature
- US09853012B2 Semiconductor packages having through electrodes and methods of fabricating the same Public/Granted day:2017-12-26
Information query
IPC分类: