VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Invention Application

US20160149021A1 VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 有权

Title translation: 垂直集成半导体器件及制造方法

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Patent Title: VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Patent Title (中): 垂直集成半导体器件及制造方法
Application No.: US14552567

Application Date: 2014-11-25
Publication No.: US20160149021A1

Publication Date: 2016-05-26
Inventor: Andre Schmenn , Damian Sojka
Applicant: Infineon Technologies AG
Main IPC: H01L29/74
IPC: H01L29/74 ; H01L27/02 ; H01L29/66

VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Abstract:

A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer.

Abstract(Chinese):

根据各种实施例的垂直集成的半导体器件可以包括：第一半导体层; 设置在所述第一半导体层上的第二半导电层; 设置在所述第二半导体层上的第三半导体层; 以及耦合在所述第一半导体层和所述第二半导体层之间的电旁路。

Public/Granted literature

US09515177B2 Vertically integrated semiconductor device and manufacturing method Public/Granted day:2016-12-06

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/74	....晶闸管型器件，如具有四区再生作用的