Invention Application
- Patent Title: FINFET AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): FINFET及其制造方法
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Application No.: US14819602Application Date: 2015-08-06
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Publication No.: US20160149040A1Publication Date: 2016-05-26
- Inventor: Wei-Yang LEE , Ting-Yeh CHEN , Chia-Ling CHAN , Chien-Tai CHAN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the recess. The gate protrudes from the recess and across over the fin structure. The source-drain region is in the fin structure and adjacent to the doped region. Methods for forming the FinFET are also provided.
Public/Granted literature
- US09343575B1 FinFET and method of manufacturing the same Public/Granted day:2016-05-17
Information query
IPC分类:
