Provided are resistive random access memory (ReRAM) cells with embedded resistors and methods of fabricating these cells. An embedded resistor may include a metal silicon nitride of a first metal and may be doped with a second metal, which is different from the first metal. The second metal may have less affinity to form covalent bonds with nitrogen than the first metal. As such, the second metal may be unbound and more mobile in the embedded resistor that the first metal. The second metal may help establishing conductive paths in the embedded resistor in addition to the metal nitride resulting in more a stable resistivity despite changing potential applies to the ReRAM cell. In other words, the embedded resistor having such composition will have more linear I-V performance. The concentration of the second metal in the embedded resistor may be substantially less than the concentration of the first metal.