Invention Application
- Patent Title: HIGH FREQUENCY ATTENUATOR
- Patent Title (中): 高频衰减器
-
Application No.: US14847900Application Date: 2015-09-08
-
Publication No.: US20160164493A1Publication Date: 2016-06-09
- Inventor: Thomas Quemerais , Alice Bossuet , Daniel Gloria
- Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
- Priority: FR1462091 20141209
- Main IPC: H03H11/24
- IPC: H03H11/24 ; G01R1/067 ; H03F3/60
Abstract:
An attenuator includes: a first circuit including a common collector or common drain amplifier formed of a first transistor having its control node connected to an input of the attenuator and its emitter or source connected to an intermediate node of the attenuator; and a second circuit including a common collector or common drain amplifier formed of a second transistor having its emitter or source connected to the intermediate node and its control node connected to an output of the attenuator.
Public/Granted literature
- US09929720B2 High frequency attenuator Public/Granted day:2018-03-27
Information query
