Invention Application
US20160172280A1 POWER FIELD-EFFECT TRANSISTOR (FET), PRE-DRIVER, CONTROLLER, AND SENSE RESISTOR INTEGRATION FOR MULTI-PHASE POWER APPLICATIONS 有权
用于多相电源应用的功率场效应晶体管(FET),预驱动器,控制器和感测电阻集成

  • Patent Title: POWER FIELD-EFFECT TRANSISTOR (FET), PRE-DRIVER, CONTROLLER, AND SENSE RESISTOR INTEGRATION FOR MULTI-PHASE POWER APPLICATIONS
  • Patent Title (中): 用于多相电源应用的功率场效应晶体管(FET),预驱动器,控制器和感测电阻集成
  • Application No.: US14965697
    Application Date: 2015-12-10
  • Publication No.: US20160172280A1
    Publication Date: 2016-06-16
  • Inventor: Indumini Ranmuthu
  • Applicant: Texas Instruments Incorporated
  • Main IPC: H01L23/495
  • IPC: H01L23/495 H01L25/065 H01L27/06
POWER FIELD-EFFECT TRANSISTOR (FET), PRE-DRIVER, CONTROLLER, AND SENSE RESISTOR INTEGRATION FOR MULTI-PHASE POWER APPLICATIONS
Abstract:
Techniques are described for integrating power field-effect transistors (FETs), pre-drivers, controllers, and/or resistors into a common multi-chip package for implementing multi-phase bridge circuits. The techniques may provide a multi-chip package with at least two high-side (HS) FETs and at least two low-side (LS) FETs, and place the at least two HS FETs or the at least LS FETs on a common die. Placing at least two FETs on a common die may reduce the number of die and the number of thermal pads (i.e., die pads) needed to implement a set of power FETs, thereby decreasing component count of a multi-phase bridge circuit and/or allowing a more compact, higher current density multi-phase bridge circuit to be obtained without significantly increasing thermal power dissipation of the circuit.
Information query
Patent Agency Ranking
0/0