Invention Application
US20160178450A1 On-Chip Circuit and Method for Accurately Measuring Die Temperature of an Integrated Circuit
审中-公开
片上电路和精确测量集成电路芯片温度的方法
- Patent Title: On-Chip Circuit and Method for Accurately Measuring Die Temperature of an Integrated Circuit
- Patent Title (中): 片上电路和精确测量集成电路芯片温度的方法
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Application No.: US14925703Application Date: 2015-10-28
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Publication No.: US20160178450A1Publication Date: 2016-06-23
- Inventor: Dimitar Trifonov , Habib Sami Karaki
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: G01K7/16
- IPC: G01K7/16

Abstract:
An integrated circuit and method are provided for accurately measuring the temperature of a die of the integrated circuit. Pairs of diodes are driven with different currents in order to generate a series of thermal voltages. The ADC measures the series of thermal voltages against an external reference voltage. Based on these thermal voltage measurements, the ADC calculates the die temperature. The different currents used to generate the series of thermal voltages are selected at specific ratios to each other in order to promote the ability of the ability of the ADC to calculate the die temperature using standard components and logic of an ADC. These thermal voltages are generated and measured using integrated components of the die for which a temperature measurement is being provided, thus reducing several sources of inaccuracies in conventional die temperature measurement techniques. Addition embodiments are provided for detecting defective diodes based on comparisons of the thermal voltage outputs.
Public/Granted literature
- US10359321B2 On-chip circuit and method for accurately measuring die temperature of an integrated circuit Public/Granted day:2019-07-23
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