In an approach to determine one or more exposure areas in a reticle field and associated lithography process parameters for the one or more exposure areas, the computer receives a semiconductor design and sends the semiconductor design to a design analysis program. Additionally, the computer receives data from the design analysis program. Furthermore, the computer determines one or more exposure areas in the reticle field, and at least one lithography process parameter for each of the one or more exposure areas in the reticle field based, at least in part, on the data from the design analysis program, the semiconductor design, and one or more clustering algorithms associated with the design analysis program.