发明申请
US20160181241A1 METHODS OF FORMING TUNEABLE TEMPERATURE COEFFICIENT FR EMBEDDED RESISTORS
有权
形成可调谐温度系数FR嵌入式电阻的方法
- 专利标题： METHODS OF FORMING TUNEABLE TEMPERATURE COEFFICIENT FR EMBEDDED RESISTORS
- 专利标题（中）： 形成可调谐温度系数FR嵌入式电阻的方法
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申请号： US14909980申请日： 2013-09-27
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公开(公告)号： US20160181241A1公开(公告)日： 2016-06-23
- 发明人: Walid Hafez , Chen-Guan LEE , Chia-Hong JAN
- 申请人： Walid HAFEZ , Chen-Guan LEE , Chia-Hong JAN
- 国际申请： PCT/US2013/062164 WO 20130927
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L49/02
摘要：
Methods of forming resistor structures with tunable temperature coefficient of resistance are described. Those methods and structures may include forming an opening in a resistor material adjacent source/drain openings on a device substrate, forming a dielectric material between the resistor material and the source/drain openings, and modifying the resistor material, wherein a temperature coefficient resistance (TCR) of the resistor material is tuned by the modification. The modifications include adjusting a length of the resistor, forming a compound resistor structure, and forming a replacement resistor.
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