A semiconductor device (100A) includes a first metal layer (12) including a gate electrode (12g); a gate insulating layer (14) formed on the first metal layer; an oxide semiconductor layer (16) formed on the gate insulating layer; a second metal layer (18) formed on the oxide semiconductor layer; an interlayer insulating layer (22) formed on the second metal layer; and a transparent electrode layer (TE) including a transparent conductive layer (Tc). The oxide semiconductor layer includes a first portion (16a) and a second portion (16b) extending while crossing an edge of the gate electrode. The second metal layer includes a source electrode (18s) and a drain electrode (18d). The interlayer insulating layer does not include an organic insulating layer. The interlayer insulating layer includes a contact hole (22a) formed so as to overlap the second portion and an end of the drain electrode that is closer to the second portion. The transparent conductive layer (Tc) is in contact with the end of the drain electrode and the second portion of the oxide semiconductor layer in the contact hole.