发明申请
US20160181409A1 Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors
审中-公开
双向导通双向功率开关和两个合并晶体管门控两个控制端子
- 专利标题： Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors
- 专利标题（中）： 双向导通双向功率开关和两个合并晶体管门控两个控制端子
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申请号： US14918440申请日： 2015-10-20
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公开(公告)号： US20160181409A1公开(公告)日： 2016-06-23
- 发明人: William C. Alexander , Richard A. Blanchard
- 申请人： Ideal Power Inc.
- 主分类号： H01L29/747
- IPC分类号： H01L29/747 ; H01L29/40
摘要：
Power semiconductor devices, methods, and systems, in which additional switches are added on both surfaces of a two-sided power device with bidirectional conduction. The additional switches are preferably vertical trench MOS transistors, and permit the emitter-base junction on either surface to be shunted easily.
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