发明申请
- 专利标题: VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME
- 专利标题(中): 可变电阻材料层和包括其的可变电阻存储器件
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申请号: US14965616申请日: 2015-12-10
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公开(公告)号: US20160181521A1公开(公告)日: 2016-06-23
- 发明人: Do-Hyung Kim , Jong-Uk KIM , Dong-Ho AHN , Sung-Lae CHO
- 申请人: Do-Hyung Kim , Jong-Uk KIM , Dong-Ho AHN , Sung-Lae CHO
- 优先权: KR10-2014-0186754 20141223
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0
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