发明申请
US20160181521A1 VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME 有权
可变电阻材料层和包括其的可变电阻存储器件

VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME
摘要:
A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0
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