Invention Application
- Patent Title: NONVOLATILE MEMORY DEVICE, READ METHOD FOR NONVOLATILE MEMORY DEVICE, AND MEMORY SYSTEM INCORPORATING NONVOLATILE MEMORY DEVICE
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Application No.: US15062240Application Date: 2016-03-07
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Publication No.: US20160189760A1Publication Date: 2016-06-30
- Inventor: Chul Bum KIM , Hyung Gon KIM , Chul Ho LEE , Hong Seok CHANG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2010-0113468 20101115
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; G11C8/10
Abstract:
A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
Information query
