Invention Application
US20160202329A1 AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP 审中-公开
用于检测磁芯的磁场的AMR型集成磁传感器

  • Patent Title: AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP
  • Patent Title (中): 用于检测磁芯的磁场的AMR型集成磁传感器
  • Application No.: US14947835
    Application Date: 2015-11-20
  • Publication No.: US20160202329A1
    Publication Date: 2016-07-14
  • Inventor: Dario Paci
  • Applicant: STMicroelectronics S.R.L.
  • Priority: ITTO2015A000028 20150113
  • Main IPC: G01R33/09
  • IPC: G01R33/09 G01R33/00
AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP
Abstract:
An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
Information query
Patent Agency Ranking
0/0