Invention Application
- Patent Title: AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP
- Patent Title (中): 用于检测磁芯的磁场的AMR型集成磁传感器
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Application No.: US14947835Application Date: 2015-11-20
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Publication No.: US20160202329A1Publication Date: 2016-07-14
- Inventor: Dario Paci
- Applicant: STMicroelectronics S.R.L.
- Priority: ITTO2015A000028 20150113
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G01R33/00

Abstract:
An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
Public/Granted literature
- US10288697B2 AMR-type integrated magnetoresistive sensor for detecting magnetic fields perpendicular to the chip Public/Granted day:2019-05-14
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