Invention Application
- Patent Title: HORIZONTAL COUPLING TO SILICON WAVEGUIDES
- Patent Title (中): 水平耦合到硅波形
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Application No.: US14991311Application Date: 2016-01-08
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Publication No.: US20160202421A1Publication Date: 2016-07-14
- Inventor: Long Chen
- Applicant: Acacia Communications, Inc.
- Applicant Address: US MA Maynard
- Assignee: Acacia Communications, Inc.
- Current Assignee: Acacia Communications, Inc.
- Current Assignee Address: US MA Maynard
- Main IPC: G02B6/30
- IPC: G02B6/30 ; G02B6/136

Abstract:
Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
Public/Granted literature
- US10031292B2 Horizontal coupling to silicon waveguides Public/Granted day:2018-07-24
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