Invention Application
- Patent Title: PLANAR FIELD EMITTERS AND HIGH EFFICIENCY PHOTOCATHODES BASED ON ULTRANANOCRYSTALLINE DIAMOND
- Patent Title (中): 基于超声波金刚石的平面场发射体和高效光电子能谱
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Application No.: US14594949Application Date: 2015-01-12
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Publication No.: US20160203937A1Publication Date: 2016-07-14
- Inventor: Anirudha V. Sumant , Sergey V. Baryshev , Sergey P. Antipov
- Applicant: UChicago Argonne, LLC
- Applicant Address: US IL Chicago
- Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee Address: US IL Chicago
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J9/12 ; H01J1/34 ; H01J9/02

Abstract:
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
Public/Granted literature
- US09418814B2 Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond Public/Granted day:2016-08-16
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