Invention Application
- Patent Title: METHOD AND ION IMPLANTER FOR LOW TEMPERATURE IMPLANTATION
- Patent Title (中): 用于低温植入的方法和离子植入物
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Application No.: US14595813Application Date: 2015-01-13
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Publication No.: US20160203950A1Publication Date: 2016-07-14
- Inventor: Anwar HUSAIN , Tzuyuan YIIN , Tienyu SHENG
- Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.
- Main IPC: H01J37/317
- IPC: H01J37/317 ; C23C14/48 ; H01J37/244 ; G01K7/22 ; H01J37/20

Abstract:
A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.
Information query