发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
- 专利标题（中）： 制造半导体器件的方法，基板处理装置和记录介质
-
申请号： US14994334申请日： 2016-01-13
-
公开(公告)号： US20160203978A1公开(公告)日： 2016-07-14
- 发明人: Yoshitomo HASHIMOTO , Yoshiro HIROSE , Tatsuru MATSUOKA , Katsuyoshi HARADA
- 申请人： HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址： JP TOKYO
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2015-005042 20150114
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01J37/32 ; C23C16/50
摘要：
A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film on the oxygen-containing film; modifying the initial film into a first nitride film by nitriding the initial film with plasma; and supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film on the first nitride film.
公开/授权文献
信息查询
IPC分类:
