Invention Application
- Patent Title: METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTATION PROCESSES
- Patent Title (中): 用改进的植入方法制造集成电路的方法
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Application No.: US15074483Application Date: 2016-03-18
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Publication No.: US20160204038A1Publication Date: 2016-07-14
- Inventor: Alban Zaka , Ran Yan , El Mehdi Bazizi , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES, Inc.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/268 ; H01L21/8234 ; H01L21/265 ; H01L21/324
Abstract:
Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.
Public/Granted literature
- US09881841B2 Methods for fabricating integrated circuits with improved implantation processes Public/Granted day:2018-01-30
Information query
IPC分类:
