Invention Application
US20160204041A1 METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权
检查半导体器件的方法和使用其制造半导体器件的方法

  • Patent Title: METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
  • Patent Title (中): 检查半导体器件的方法和使用其制造半导体器件的方法
  • Application No.: US14988991
    Application Date: 2016-01-06
  • Publication No.: US20160204041A1
    Publication Date: 2016-07-14
  • Inventor: Minkook KIMWooseok KOYusin YANGSangkil LEEChungsam JUN
  • Applicant: SAMSUNG ELECTRONICS CO., LTD.
  • Priority: KR10-2015-0003362 20150109
  • Main IPC: H01L21/66
  • IPC: H01L21/66
METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
Abstract:
A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.
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