Invention Application
- Patent Title: SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER
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Application No.: US15077761Application Date: 2016-03-22
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Publication No.: US20160204060A1Publication Date: 2016-07-14
- Inventor: Chih-Chien CHI , Chung-Chi KO , Mei-Ling CHEN , Huang-Yi HUANG , Szu-Ping TUNG , Ching-Hua HSIEH
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L21/768

Abstract:
A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.
Public/Granted literature
- US09640428B2 Self-aligned repairing process for barrier layer Public/Granted day:2017-05-02
Information query
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